US Patent Issued to SAMSUNG ELECTRONICS on Feb. 3 for "Semiconductor memory device including a charge storage layer" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,312, issued on Feb. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor memory device including a charge storage layer" was invented by Dong Kyu Lee (Suwon-si, South Korea), Yu Jin Kim (Suwon-si, South Korea) and Guk Hyon Yon (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first substrate defining a cell array region, a mold structure including a plurality of gate electrodes sequentially spaced and stacked on the first substrate in a step form, and a channel hole defined as penetrating the plurality of gate electrodes on the cell array region in a vert...