US Patent Issued to SAMSUNG ELECTRONICS on Feb. 24 for "Transistor devices having buried interconnection line below source/drain regions and one or more protective layers covering lower surfaces of gate structures" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,775, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Transistor devices having buried interconnection line below source/drain regions and one or more protective layers covering lower surfaces of gate structures" was invented by Doohyun Lee (Hwaseong-si, South Korea), Heonjong Shin (Yongin-si, South Korea), Seonbae Kim (Hwaseong-si, South Korea), Jinyoung Park (Hwaseong-si, South Korea), Hyunho Park (Suwon-si, South Korea), Jimin Yu (Suwon-si, South Korea) and Jaeran Jang (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active region extending in a fi...