US Patent Issued to SAMSUNG ELECTRONICS on Feb. 24 for "Semiconductor devices including separate charge storage layers" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,734, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices including separate charge storage layers" was invented by Taisoo Lim (Seoul, South Korea) and Suhyeong Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices are provided. A semiconductor device includes gate electrodes on a substrate and stacked perpendicularly to an upper surface of the substrate. The semiconductor device includes interlayer insulating layers alternately stacked with the gate electrodes. Moreover, the semiconductor device includes channel structures passing through the gate e...