US Patent Issued to SAMSUNG ELECTRONICS on Feb. 24 for "Semiconductor device including a field effect transistor and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,827, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including a field effect transistor and method of fabricating the same" was invented by Inhyun Song (Suwon-si, South Korea), Junggil Yang (Hwaseong-si, South Korea) and Minju Kim (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are semiconductor devices and their fabricating methods. The semiconductor device comprises first and second active patterns, a first channel pattern including first semiconductor patterns, a second channel pattern including second semiconductor patterns, a gate electrode on the...