ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,692, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Jeong Yeol Bae (Suwon-si, South Korea), Jong Soo Lee (Suwon-si, South Korea), Duk Soo Kim (Suwon-si, South Korea) and Eui Bong Yang (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first Low Noise Amplifier (LNA), a second LNA, first and second receiving circuits, an a radio frequency multiplexer. The first LNA is connected to a first receiving port, and the second LNA is connected to a second receiving port different from the first receiving port. The first receiv...