US Patent Issued to SAMSUNG ELECTRONICS on Feb. 24 for "Integrated circuit devices including via structures having a narrow upper portion, and related fabrication methods" (New York Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,036, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Integrated circuit devices including via structures having a narrow upper portion, and related fabrication methods" was invented by Tae Sun Kim (Ballston Spa, N.Y.), Janggeun Lee (Delmar, N.Y.), Jaemyung Choi (Niskayuna, N.Y.) and Kang-ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit devices are provided. An integrated circuit device includes an insulating layer and a metal via structure that is in the insulating layer. The metal via structure has a lower portion and an upper portion that is narrower than the lower po...