ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,719, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Integrated circuit device" was invented by Yangdoo Kim (Suwon-si, South Korea), Sangwuk Park (Suwon-si, South Korea), Minkyu Suh (Suwon-si, South Korea), Geonyeop Lee (Suwon-si, South Korea), Dokeun Lee (Suwon-si, South Korea) and Jungpyo Hong (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a substrate having a plurality of active regions defined therein, a first word line structure including a first word line, a first gate dielectric film surrounding the first word line, and an oxide semicondu...