ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,355, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Stack type semiconductor device" was invented by Chaelyoung Kim (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stack-type semiconductor device includes: a first nanosheet stack structure arranged on a substrate; a first source/drain region extending on a side surface of the first nanosheet stack structure; a second nanosheet stack structure stacked on the first nanosheet stack structure; a second source/drain region extending on a side surface of the second nanosheet stack structure; a contact hole adjacent to a side surface of ...