ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,316, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device having active regions with different widths and power lines thereover" was invented by Taehyung Kim (Hwaseong-si, South Korea), Kwanyoung Chun (Suwon-si, South Korea) and Yoonjin Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device comprising an active region that protrudes upwardly from a substrate, a plurality of channel patterns that are spaced apart from each other in a first direction on the active region, and a gate electrode that extends in the first direction on the activ...