ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,641, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd..
"Semiconductor device and method for manufacturing the same" was invented by Sang Hoon Ahn (Seongnam-si, South Korea), Kyung Seok Oh (Seoul, South Korea), Seung-Heon Lee (Seoul, South Korea) and Jun Hyuk Lim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device may include a first interlayer insulating film containing therein a plurality of pores, a first line structure in the first interlayer insulating film, an inserted insulating fi...