US Patent Issued to SAMSUNG ELECTRONICS on Feb. 17 for "Backside power distribution network semiconductor architecture using direct epitaxial layer connection and method of manufacturing the same" (New York Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,677, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"Backside power distribution network semiconductor architecture using direct epitaxial layer connection and method of manufacturing the same" was invented by Saehan Park (Clifton Park, N.Y.) and Seungyoung Lee (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a backside power distribution network (BSPDN) semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device including an active device that includes an epitaxial layer, a second semiconductor device...