ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,324, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).

"Three-dimensional semiconductor memory device and electronic system including the same" was invented by Jaeho Kim (Hwaseong-si, South Korea), Jiwon Kim (Hwaseong-si, South Korea), Joonsung Kim (Seoul, South Korea), Sukkang Sung (Seongnam-si, South Korea), Sangdon Lee (Hwaseong-si, South Korea), Jong-Min Lee (Yongin-si, South Korea) and Euntaek Jung (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor devices including a substrate, a stack structure including gate electrodes on the substrate and strin...