US Patent Issued to SAMSUNG ELECTRONICS on Feb. 10 for "Semiconductor devices having improved electrical interconnect structures" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,718, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices having improved electrical interconnect structures" was invented by Panjae Park (Seoul, South Korea), Subin Choi (Suwon-si, South Korea) and Chulhong Park (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active region extending on a substrate in a first direction, a gate electrode intersecting the active region and extending in a second direction, perpendicular to the first direction, a contact structure disposed on the active region on one side of the gate electrode and exten...