ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,372, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device including semiconductor patterns having varied thicknesses" was invented by Doyoung Choi (Hwaseong-si, South Korea), Daewon Ha (Seoul, South Korea), Kyungho Kim (Suwon-si, South Korea), Mingyu Kim (Hwaseong-si, South Korea) and Kyuman Hwang (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate including first and second regions, first and second active patterns in the first and second regions, respectively; first source/drain patterns and a first channel pattern including first ...