ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,327, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of manufacturing the same" was invented by Siyeon Cho (Yongin-si, South Korea), Hyunmook Choi (Suwon-si, South Korea) and Jihong Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, an insulation layer and a first gate electrode layer are alternately and repeatedly formed on a substrate in a first direction perpendicular to an upper surface of the substrate to form a mold layer. The first gate electrode layer includes silicon doped with impurities havi...