ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,377, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).
"Oxide semiconductor transistor" was invented by Kwanghee Lee (Hwaseong-si, South Korea), Sangwook Kim (Seongnam-si, South Korea), Euntae Kim (Osan-si, South Korea), Jeeeun Yang (Uiwang-si, South Korea), Moonil Jung (Suwon-si, South Korea) and Sangjun Hong (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are oxide semiconductor transistors. The oxide semiconductor transistor includes a substrate, a channel layer arranged on the substrate and having a flat plate shape extending along one plane, a gate electrode facing a pa...