US Patent Issued to SAMSUNG ELECTRONICS on Feb. 10 for "Nonvolatile memory device including wordline leakage current detector, storage device including the same, and method of operating the same" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,632, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nonvolatile memory device including wordline leakage current detector, storage device including the same, and method of operating the same" was invented by Buil Nam (Suwon-si, South Korea) and Jinsun Yeom (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a memory cell array including a plurality of memory cells connected to a plurality of wordlines and a plurality of bitlines, a row decoder configured to select one of the plurality of wordlines in response to an address, and a wordline leakage curren...