US Patent Issued to SAMSUNG ELECTRONICS on Feb. 10 for "Non-volatile memory devices including twisted block select lines" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,622, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Non-volatile memory devices including twisted block select lines" was invented by Seokhyeon Chae (Suwon-si, South Korea), Hyunkook Park (Suwon-si, South Korea), Inmo Kim (Suwon-si, South Korea) and Hanmin Nam (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to some embodiments of the inventive concept, there is provided a non-volatile memory device comprising: a memory cell array; a pass transistor circuit electrically connected to the memory cell array; a block select line group including a plurality of block select lines, w...