ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,330, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Method of manufacturing semiconductor" was invented by Dongyoung Kim (Suwon-si, South Korea), Soojung Park (Suwon-si, South Korea), Hyesong Jeon (Suwon-si, South Korea), Hyungon Pyo (Suwon-si, South Korea) and Iksoo Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device may include selectively depositing a carbon layer on sidewalls of a substrate mold before depositing a sacrificial metal layer in a semiconductor device structure having a vertical stacked structure."
The patent was fil...