US Patent Issued to SAMSUNG ELECTRONICS on Feb. 10 for "3D-stacked semiconductor device including gate structure with RMG inner spacer protecting lower work-function metal layer" (New York Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,375, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"3D-stacked semiconductor device including gate structure with RMG inner spacer protecting lower work-function metal layer" was invented by Byounghak Hong (Latham, N.Y.), Gunho Jo (Clifton, N.Y.), Seungchan Yun (Waterford, N.Y.) and Jaejik Baek (Watervliet, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a multi-stack semiconductor device that includes: a lower field-effect transistor in which a lower channel structure is surrounded by a lower gate structure including a lower gate dielectric layer, a lower work-function metal layer and a lower gate me...