ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,597, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor devices" was invented by Hokyun An (Seoul, South Korea), Bumsoo Kim (Hwaseong-si, South Korea), Hyunseung Kim (Bucheon-si, South Korea) and Guangfan Jiao (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a substrate, an interface insulation pattern, a gate insulation pattern, a threshold voltage controlling metal pattern and a conductive pattern. The interface insulation pattern may be formed on the substrate. The gate insulation pattern including an oxide having a dielectric constant hi...