US Patent Issued to SAMSUNG ELECTRONICS on Dec. 30 for "Three-dimensional semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,996, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Three-dimensional semiconductor device and method of fabricating the same" was invented by Kyunghwan Lee (Suwon-si, South Korea), Sungil Park (Suwon-si, South Korea), Jae Hyun Park (Suwon-si, South Korea) and Daewon Ha (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor device comprises a first active region on a substrate and including a lower channel pattern and a lower source/drain pattern connected to the lower channel pattern, a second active region stacked on the first active region and including an...