ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,429, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method of manufacturing the same" was invented by Junyun Kweon (Suwon-si, South Korea), Yeongbeom Ko (Suwon-si, South Korea), Wooju Kim (Suwon-si, South Korea), Jungseok Ryu (Suwon-si, South Korea), Junho Yoon (Suwon-si, South Korea) and Hwayoung Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first chip structure including a wiring structure disposed on a circuit elements, and first bonding metal layers and a first bonding insulating layer on the wiring structure, an uppe...