US Patent Issued to SAMSUNG ELECTRONICS on Dec. 30 for "Nonvolatile memory device and method of detecting defective memory cell block of nonvolatile memory device" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,169, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nonvolatile memory device and method of detecting defective memory cell block of nonvolatile memory device" was invented by Myungnam Lee (Hwaseong-si, South Korea), Daehan Kim (Seoul, South Korea) and Wontaeck Jung (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of detecting, by a nonvolatile memory system, a defective memory cell block from among memory cell blocks, includes performing, after performing an erase operation, a read operation on at least some memory cells included in a target memory cell block based on an of...