ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,367, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Gyeonggi-do, South Korea).
"Method for fabricating a semiconductor device" was invented by Ui Hyoung Lee (Hwaseong-si, South Korea), Hyun Jun Ahn (Hwaseong-si, South Korea), Ho Nyun Park (Hwaseong-si, South Korea) and Jong Seok Lee (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes forming a mold structure on a substrate, the mold structure including inter-electrode insulating films and sacrificial films alternately and repeatedly stacked in a first direction, forming a channel hole which penetrates the...