US Patent Issued to SAMSUNG ELECTRONICS on Dec. 23 for "Wet etching method and method of fabricating semiconductor device by using the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,010, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Wet etching method and method of fabricating semiconductor device by using the same" was invented by Taeheon Kim (Busan, South Korea), Kyunghyun Kim (Seoul, South Korea), Changsup Mun (Hwaseong-si, South Korea), Junyoul Yang (Seoul, South Korea), Sanghoon Jeong (Suwon-si, South Korea), Yongsik Chung (Hwaseong-si, South Korea) and Seungcheol Chae (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wet etching method includes: providing a structure including an etching target film into a process bath containing a first etching solution...