US Patent Issued to SAMSUNG ELECTRONICS on Dec. 23 for "Vertical memory devices and methods of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,412, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Vertical memory devices and methods of manufacturing the same" was invented by Young-Hwan Son (Hwaseong-si, South Korea), Kohji Kanamori (Seongnam-si, South Korea), Shin-Hwan Kang (Seoul, South Korea) and Young Jin Kwon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical memory device includes gate electrodes on a substrate, a channel extending through the gate electrodes, and a contact plug extending through the gate electrodes. The gate electrodes are stacked in a first direction substantially vertical to an upper surface ...