ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,448, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor devices" was invented by Jung-Han Lee (Anyang-si, South Korea), Jae-Hwan Lee (Seoul, South Korea), Sang-Su Kim (Yongin-si, South Korea), Hwan-Wook Choi (Yongin-si, South Korea), Tae-Jong Lee (Hwaseong-si, South Korea) and Seung-Mo Ha (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall...