US Patent Issued to SAMSUNG ELECTRONICS on Dec. 23 for "Nonvolatile memory device and operation method thereof, and storage device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,504,921, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd..

"Nonvolatile memory device and operation method thereof, and storage device including the same" was invented by Kwanhyo Kim (Suwon-si, South Korea) and Taec-Jun Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device that includes a memory cell array including a plurality of nonvolatile memory cells; a page buffer circuit connected to the memory cell array; a status data memory circuit storing a first plurality of status data items; a control logic circuit controlling the status data memory circuit to accumulate the first plurality of ...