US Patent Issued to SAMSUNG ELECTRONICS on Dec. 23 for "Method to select phys and a configuration of the data path in a multi PHY DRAM" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,060, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Method to select phys and a configuration of the data path in a multi PHY DRAM" was invented by Yunseok Yang (Suwon-si, South Korea), Yunkyeong Jeong (Suwon-si, South Korea), Jaewoo Shin (Suwon-si, South Korea), Minhwan An (Suwon-si, South Korea) and Jin Suk Chung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first physical interface, a second physical interface, a first memory core, a second memory core, and a setting circuit. The first memory core is assigned to the first physical interface and includ...