US Patent Issued to SAMSUNG ELECTRONICS on Dec. 23 for "Memory device including sense amplifier and offset cancellation method" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,873, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device including sense amplifier and offset cancellation method" was invented by Changyoung Lee (Suwon-si, South Korea) and Kyuchang Kang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sense amplifier includes a first isolation transistor connected to a first memory cell through a first bit line, a second isolation transistor connected to a second memory cell through a second bit line, and sense amplifying circuitry connected to the first memory cell through the first isolation transistor, connected to the second memory cell...