US Patent Issued to SAMSUNG ELECTRONICS on Dec. 23 for "Memory device including memory blocks different from each other" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,416, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device including memory blocks different from each other" was invented by Hyukje Kwon (Seoul, South Korea), Byungyong Choi (Seongnam-si, South Korea) and Jisang Lee (Iksan-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a cell region in which memory blocks, respectively including gate electrodes and insulating layers, alternately stacked on a substrate, and channel structures, extending in a first direction, perpendicular to an upper surface of the substrate, passing through the gate electrodes and the insulat...