ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,074, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure" was invented by Hyeonjin Shin (Suwon-si, South Korea), Sangwon Kim (Seoul, South Korea), Kyung-Eun Byun (Suwon-si, South Korea), Hyunjae Song (Hwaseong-si, South Korea), Keunwook Shin (Yongin-si, South Korea), Eunkyu Lee (Yongin-si, South Korea), Changseok Lee (Gwacheon-si, South Korea), Yeonchoo Cho (Seongnam-si, South Korea) and Taejin Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office...