US Patent Issued to SAMSUNG ELECTRONICS on Dec. 23 for "Dielectric material comprising bismuth compound and method of making the same" (Massachusetts Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,502,662, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Gyeonggi-do, South Korea).

"Dielectric material comprising bismuth compound and method of making the same" was invented by Valentina Lacivita (Cambridge, Mass.), Yan Wang (Brookline, Mass.) and Jeong-Ju Cho (Lexington, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrode assembly includes a first electrode and a dielectric layer on the first electrode. The dielectric layer includes a bismuth compound of the formula Bi2(CrO4)2Cr2O7, Pb4(BiO4)(PO4), Ag3BiO3, Bi2CdO2(GeO4), Bi2Te4O11, Cs6Bi4O9, Na3Bi(PO4)2, Bi2(SeO3)3, or a combination thereof. The electrode assembly can...