US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Three-dimensional semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,494, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional semiconductor device and method of fabricating the same" was invented by Sungil Park (Suwon-si, South Korea), Jae Hyun Park (Hwaseong-si, South Korea) and Daewon Ha (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a three-dimensional semiconductor device and a method of fabricating the same. The semiconductor device includes: a first active region on a substrate, the first active region including a pair of lower source/drain regions and a lower channel structure; a second active region on the first active reg...