US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Semiconductor devices having spacer structures" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,489, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor devices having spacer structures" was invented by Jeonil Lee (Suwon-si, South Korea), Gyuhyun Kil (Hwaseong-si, South Korea), Doosan Back (Seoul, South Korea), Chansic Yoon (Anyang-si, South Korea) and Junghoon Han (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate dielectric layer on the substrate, the gate dielectric layer including a recess at a side surface thereof, a gate electrode structure on the gate dielectric layer, a gate capping layer on the gate electrode str...