US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Semiconductor device having an upper end of a lower spacer structure on a level same as or lower than a lower end of a storage node contact" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,056, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device having an upper end of a lower spacer structure on a level same as or lower than a lower end of a storage node contact" was invented by Kiseok Lee (Hwaseong-si, South Korea), Chansic Yoon (Suwon-si, South Korea) and Keunnam Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including an active region, a word line structure, a bit line structure on the substrate, and a bit line contact pattern configured to electrically connect a first impurity region of the active region ...