ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,437, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Non-volatile memory device and method of manufacturing the same" was invented by Younggul Song (Hwaseong-si, South Korea), Junyeong Seok (Seoul, South Korea), Eun chu Oh (Hwaseong-si, South Korea), Minho Kim (Seongnam-si, South Korea) and Byungchul Jang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes a substrate, a stack structure that includes a first gate layer that extends in a horizontal direction and a second gate layer that extends in the horizontal direction and is disposed apart from the fir...