US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Method of manufacturing semiconductor device comprising doping element in the charge storage layer" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,436, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of manufacturing semiconductor device comprising doping element in the charge storage layer" was invented by Minkyung Kang (Seoul, South Korea), Suhyeong Lee (Hwaseong-si, South Korea), Seohee Park (Daejeon, South Korea), Gukhyon Yon (Yongin-si, South Korea) and Yongsuk Tak (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of manufacturing a semiconductor device, the method including: forming a mold structure comprising insulation layers and sacrificial layers alternately and repeatedly stacked on a substrate; for...