ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,823, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device and operation method thereof" was invented by Seungki Hong (Suwon-si, South Korea), Seung-jun Lee (Suwon-si, South Korea) and Minho Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes plural banks that perform a per-bank refresh (PBR) operation, and an address register that provides a single row address signal to two banks of the plural banks, the two banks simultaneously performing the PBR operation and the single row address signal being shared by the two banks. The two banks activate a word lin...