US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Memory device, operation method of memory device, and operation method of test device configured to test memory device" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,856, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device, operation method of memory device, and operation method of test device configured to test memory device" was invented by Kuihan Ko (Suwon-si, South Korea), Sang-Won Park (Suwon-si, South Korea), Won-Taeck Jung (Suwon-si, South Korea), Heewon Son (Suwon-si, South Korea) and Bongsoon Lim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array, a reference generating circuit, a row decoding circuit that is connected to the memory cell array through word lines, a page buffer circuit that i...