US Patent Issued to SAMSUNG ELECTRONICS on Dec. 16 for "Three-dimensional semiconductor memory device and electronic system including vertical structures and seed layer" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,615, issued on Dec. 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Three-dimensional semiconductor memory device and electronic system including vertical structures and seed layer" was invented by Yoonhwan Son (Seoul, South Korea), Minsoo Shin (Seoul, South Korea) and Joongshik Shin (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor memory device may include a substrate, a stack structure including interlayer dielectric layers and gate electrodes alternately and repeatedly stacked on the substrate and including a first stack structure on the substrate and a second s...