US Patent Issued to SAMSUNG ELECTRONICS on Dec. 16 for "Semiconductor devices having different impurity regions in active pattern" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,673, issued on Dec. 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor devices having different impurity regions in active pattern" was invented by Seokhyeon Yoon (Suwon-si, South Korea), Taehyeon Kim (Suwon-si, South Korea), Seunghun Lee (Suwon-si, South Korea) and Hyeongrae Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device include first and second active patterns, first and second gate structures, and first and second source/drain layers. The first and second active patterns extend on the first and second regions in a first direction. The first and second gate str...