US Patent Issued to SAMSUNG ELECTRONICS on Dec. 16 for "Capacitor structure and semiconductor device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,603, issued on Dec. 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Capacitor structure and semiconductor device including the same" was invented by Beomjong Kim (Seoul, South Korea) and Hanjin Lim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first electrodes on a substrate and spaced apart from each other in a horizontal direction substantially parallel to an upper surface of the substrate, first support patterns contacting sidewalls of the first electrodes, a dielectric layer on surfaces of the first electrodes and the first support patterns, and a second electrode...