ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,717, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor memory device" was invented by Yongjae Lee (Seongnam-si, South Korea), Kyungsoo Kim (Hwaseong-si, South Korea), Jinyoung Park (Suwon-si, South Korea) and Kyen-Hee Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device is disclosed. The semiconductor memory device may include a magnetic tunnel junction pattern, a spin-orbit torque (SOT) pattern in contact with a first portion of the magnetic tunnel junction pattern, a first transistor electrically connected to a second portion of the magnetic tunnel ...