ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,715, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor memory device" was invented by Jungmin Park (Suwon-si, South Korea), Ji-Sung Kim (Suwon-si, South Korea), Hanjin Lim (Suwon-si, South Korea) and Hyungsuk Jung (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a substrate including a first impurity region and a second impurity region; a first word line in a region of the substrate with the first impurity region on one side of the first word line and the second impurity region on an other side of the first word line; a bit line connected t...