ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,787, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor device and method of fabricating the same" was invented by Junsun Hwang (Suwon-si, South Korea), Sewoong Park (Suwon-si, South Korea) and JeongHo Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate including a cell disposing region and a first block border region, a plurality of gate electrodes on the cell disposing region and extending to the first block border region in a first direction to be paral...