ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,748, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method of fabricating the same" was invented by Hyohoon Byeon (Suwon-si, South Korea), Sungkeun Lim (Suwon-si, South Korea), Yuyeong Jo (Suwon-si, South Korea) and Jinyeong Joe (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a fabrication method thereof are disclosed. The device includes a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of vertically-stacked semiconductor patterns, a source/drain pattern connecte...