ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,459, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Non-volatile memory device and erase method thereof" was invented by Jungmin Park (Suwon-si, South Korea), Minseok Kim (Suwon-si, South Korea), Junyong Park (Suwon-si, South Korea), Suyong Kim (Suwon-si, South Korea) and Ilhan Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes a plurality of cell strings in a vertical direction, each of the plurality of cell strings including a plurality of memory cells respectively connected to a plurality of word lines, and an erase control transistor having a f...