US Patent Issued to Samsung Electronics on Aug. 4 for "Integrated circuit devices including intergate spacer and methods of fabrication the same" (New York, Virginia Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,784, issued on Aug. 4, was assigned to Samsung Electronics Co Ltd. (Suwon-si, South Korea).

"Integrated circuit devices including intergate spacer and methods of fabrication the same" was invented by Seungchan Yun (Waterford, N.Y.), Jaejik Baek (Watervliet, N.Y.) and Kang-Ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device may comprise an upper transistor on a substrate. The upper transistor may comprise an upper channel region. The integrated circuit device may further comprise a lower transistor between the substrate and the upper transistor. The lower transistor may comprise a lower channel region,...